FET N-Channel 55V 110A 200W IRF3205 Hexfet Power MOSFET TO-220AB

Beschrijving

Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

– Advanced Process Technology
– Ultra Low On-Resistance
– Dynamic dv/dt Rating
– 175°C Operating Temperature
– Fast Switching
– Fully Avalanche Rated

Extra informatie

Gewicht	2,5 g
Afmetingen	2 × 3 × 0,5 mm
Wattage (Watt)	200W
Voltagebereik (V)	55V
Model	IRF3205
Type	N-Channel
Toepassing	Schakelen, Versterken
Stroomdoorvoer (A)	110A
Package type	TO-220AB

Please login to post questions